Negative correlation energy in amorphous selenium: experimental evidence

被引：2

作者：

Kolobov, AV

Kondo, M

Matsuda, A

Tanaka, K

机构：

[1] Natl Inst Adv Interdisciplinary Res, Joint Res Ctr Atom Technol, Ibaraki, Osaka 305, Japan

[2] Electrotech Lab, Ibaraki, Osaka 305, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

关键词：

negative correlation energy; amorphous selenium; electron spin resonance;

D O I：

10.1016/S0022-3093(98)00157-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Photoexcitation of amorphous selenium at 20 K is shown to excite two different kinds of ESR-active defects in concentrations up to 10(20) cm(-3) which are identified as neutral singly and triply coordinated defect pairs, the former defect being more stable. At higher temperatures, charged valence alternation pairs are formed but not by a direct charge transfer. Instead, this process requires intermediate bond breaking. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：842 / 846

页数：5

相关论文

共 14 条

[1] ON QUESTION OF CHAIN-END ESR IN AMORPHOUS SELENIUM [J].

ABKOWITZ, M .

JOURNAL OF CHEMICAL PHYSICS, 1967, 46 (11) :4537-&

[2] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].

ANDERSON, PW .

PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955

[3] PHOTOINDUCED DEFECTS IN CHALCOGENIDE GLASSES [J].

BIEGELSEN, DK ;

STREET, RA .

PHYSICAL REVIEW LETTERS, 1980, 44 (12) :803-806

[4] OPTICALLY INDUCED METASTABLE PARAMAGNETIC STATES IN AMORPHOUS-SEMICONDUCTORS [J].

BISHOP, SG ;

STROM, U ;

TAYLOR, PC .

PHYSICAL REVIEW B, 1977, 15 (04) :2278-2294

[5]

BISHOP SG, 1975, PHYS REV LETT, V36, P134

[6] Deposition and extensive light soaking of highly pure hydrogenated amorphous silicon [J].

Kamei, T ;

Hata, N ;

Matsuda, A ;

Uchiyama, T ;

Amano, S ;

Tsukamoto, K ;

Yoshioka, Y ;

Hirao, T .

APPLIED PHYSICS LETTERS, 1996, 68 (17) :2380-2382

[7] Structural study of amorphous selenium by in situ EXAFS: Observation of photoinduced bond alternation [J].

Kolobov, AV ;

Oyanagi, H ;

Tanaka, K ;

Tanaka, K .

PHYSICAL REVIEW B, 1997, 55 (02) :726-734

[8] Experimental evidence for negative correlation energy and valence alternation in amorphous selenium [J].

Kolobov, AV ;

Kondo, M ;

Oyanagi, H ;

Durny, R ;

Matsuda, A ;

Tanaka, K .

PHYSICAL REVIEW B, 1997, 56 (02) :R485-R488

[9] FREQUENCY-DEPENDENT LOSS IN AMORPHOUS-SEMICONDUCTORS [J].

LONG, AR .

ADVANCES IN PHYSICS, 1982, 31 (05) :553-637

[10] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].

MOTT, NF ;

DAVIS, EA ;

STREET, RA .

PHILOSOPHICAL MAGAZINE, 1975, 32 (05) :961-996