Interfacial composition and microstructure of Fe3O4 magnetic tunnel junctions

被引:17
作者
Park, C [1 ]
Shi, YM [1 ]
Peng, YG [1 ]
Barmak, K [1 ]
Zhu, JG [1 ]
Laughlin, DE [1 ]
White, RM [1 ]
机构
[1] Carnegie Mellon Univ, Ctr Data Storage Syst, Pittsburgh, PA 15213 USA
基金
美国安德鲁·梅隆基金会;
关键词
half-metallic; magnetic tunnel junction; magnetite; magnetoresistance ratio;
D O I
10.1109/TMAG.2003.815718
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Magnetic tunnel junctions with an Fe3O4 top electrode have been fabricated. High resolution transmission electron microscopy (HRTEM) shows that in as-deposited, state, Fe And FeO phases exist at the interface. These two phases a re believed to have formed as a result of the unstable plasma condition at the start of the Fe3O4 deposition. A relatively low magnetoresistance ratio (MR) (3.5%) and low switching field (H-C2) (40 Oe) is observed which is associated with the fact that the FeO phase magnetically isolates the Fe phase from the Fe3O4 phase at the interface. After annealing at 150 degreesC for 5 h, the MR as well as the switching field (H-C2) increases by a factor of two. HRTEM shows that the FeO phase at the interface has transformed into Fe and Fe3O4 in the annealed sample, resulting in the increased MR (7.0%) and higher switching field (H-C2) (300 Oe). However, annealing does not completely remove Fe at the interface, thereby limiting the MR.
引用
收藏
页码:2806 / 2808
页数:3
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