Precise control of atomic nitrogen production in an electron cyclotron resonance plasma using N2 noble gas mixtures

被引:25
作者
Fan, ZY [1 ]
Newman, N [1 ]
机构
[1] Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA
关键词
D O I
10.1063/1.121898
中图分类号
O59 [应用物理学];
学科分类号
摘要
The atomic nitrogen flux and impacting ion kinetic energy are two important parameters which influence the quality of deposited nitride films using reactive growth. In this letter, a method is described to control the flux and kinetic energy of atomic and molecular nitrogen ions using an electron cyclotron resonance plasma with N-2/Ar and N-2/Ne as mixtures. The results clearly show that the addition of neon to nitrogen plasma can remarkably enhance the production rate of atomic nitrogen due to Penning ionization involving the metastable state of Ne. In contrast, the addition of argon significantly decreases the rater (C) 1998 American Institute of Physics.
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页码:456 / 458
页数:3
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