Charge-transport in tin-iodide perovskite CH3NH3SnI3: origin of high conductivity

被引：360

作者：

Takahashi, Yukari ^{[1
]}

Obara, Rena ^{[1
]}

Lin, Zheng-Zhong ^{[1
]}

Takahashi, Yukihiro ^{[1
]}

Naito, Toshio ^{[1
]}

Inabe, Tamotsu ^{[1
]}

Ishibashi, Shoji ^{[2
]}

Terakura, Kiyoyuki ^{[3
]}

机构：

[1] Hokkaido Univ, Grad Sch Sci, Dept Chem, Sapporo, Hokkaido 0600810, Japan

[2] Natl Inst Adv Ind Sci & Technol, Nanosyst Res Inst RICS, Tsukuba, Ibaraki 3058568, Japan

[3] Hokkaido Univ, Creat Res Initiat Sousei, Div Frontier Res, Sapporo, Hokkaido 0010021, Japan

来源：

DALTON TRANSACTIONS | 2011年 / 40卷 / 20期

基金：

日本学术振兴会;

关键词：

THERMAL-PROPERTIES; HALIDES; SN;

D O I：

10.1039/c0dt01601b

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The structural and electrical properties of a metal-halide cubic perovskite, CH3NH3SnI3, have been examined. The band structure, obtained using first-principles calculation, reveals a well-defined band gap at the Fermi level. However, the temperature dependence of the single-crystal electrical conductivity shows metallic behavior down to low temperatures. The temperature dependence of the thermoelectric power is also metallic over the whole temperature range, and the large positive value indicates that charge transport occurs with a low concentration of hole carriers. The metallic properties of this as-grown crystal are thus suggested to result from spontaneous hole-doping in the crystallization process, rather than the semi-metal electronic structure. The present study shows that artificial hole doping indeed enhances the conductivity.

引用

页码：5563 / 5568

页数：6

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