Contact hole etch scaling toward 0.1 μm

被引：4

作者：

Aoi, N ^{[1
]}

Hayashi, S ^{[1
]}

Yamanaka, M ^{[1
]}

Kubota, M ^{[1
]}

Ogura, M ^{[1
]}

机构：

[1] Matsushita Elect Corp, ULSI Proc Technol Dev Ctr, Semicond Co, Minami Ku, Kyoto 6018413, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 12B期

关键词：

contact hole etching; contact diameter; aspect ratio; RIE-lag;

D O I：

10.1143/JJAP.38.7119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reactive ion etching (RIE)-lag, i.e., the dependence of contact etched depth D on contact diameter phi, for deep quarter micron contact hole etching has been studied down to 0.1 mum contact. The nonlinearity between phi and D was found to be successfully converted into a linear relationship with reciprocal plots of phi and modified contact etched depth (D + h), taking into account the resist thickness h. In addition, by introducing the dependence on etching time t as the intercept in the relationship, the simple experimental equation was proposed in a new form to describe RIE-lag. This permits the prediction of etching rates of smaller contacts in the future and will be useful to investigate the etching mechanism.

引用

页码：7119 / 7121

页数：3