Chemical vapor deposition diamond for tips in nanoprobe experiments

被引:90
作者
Niedermann, P [1 ]
Hanni, W [1 ]
Blanc, N [1 ]
Christoph, R [1 ]
Burger, J [1 ]
机构
[1] UNIV NEUCHATEL, INST MICROTECHNOL, CH-2007 NEUCHATEL, SWITZERLAND
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1996年 / 14卷 / 03期
关键词
D O I
10.1116/1.580273
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Diamond is the most suitable material for many experimental methods in nanoprobe microscopy and materials testing. The extreme hardness, the high Young's modulus, the inert nature of the surface, and the electrical conductivity obtained through doping make this material particularly attractive. We have coated silicon atomic force microscope (AFM) levers with thin (100 nn) doped diamond layers by chemical vapor deposition (CVD). A continuous diamond coating was obtained, resulting in tips with 100-200 nm radii. Owing to their electrical conductivity, these tips were found to be adequate for conducting AFM and scanning tunneling microscope applications, some of which are briefly discussed and reviewed in this article. We have also demonstrated CVD diamond tips, microfabricated in a controlled fashion, that have a 20 nm apex radius. These tips are particularly promising for nanomechanics and general AFM use. (C) 1996 American Vacuum Society.
引用
收藏
页码:1233 / 1236
页数:4
相关论文
共 16 条
[1]   NANOINDENTATION HARDNESS MEASUREMENTS USING ATOMIC-FORCE MICROSCOPY [J].
BHUSHAN, B ;
KOINKAR, VN .
APPLIED PHYSICS LETTERS, 1994, 64 (13) :1653-1655
[2]  
BINGGELI M, 1993, P 2 INT C APPL DIAM, P51
[3]   SILICON CANTILEVERS AND TIPS FOR SCANNING FORCE MICROSCOPY [J].
BRUGGER, J ;
BUSER, RA ;
DEROOIJ, NF .
SENSORS AND ACTUATORS A-PHYSICAL, 1992, 34 (03) :193-200
[4]  
DAGATA JA, 1995, SOLID STATE TECH JUL, P91
[5]   DIAMOND FORCE MICROSCOPE TIPS FABRICATED BY CHEMICAL VAPOR-DEPOSITION [J].
GERMANN, GJ ;
MCCLELLAND, GM ;
MITSUDA, Y ;
BUCK, M ;
SEKI, H .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (09) :4053-4055
[6]   SELECTIVE-AREA DEPOSITION OF DIAMOND ON 4 IN SI WAFERS [J].
HANNI, W ;
MULLER, C ;
BINGGELI, M ;
HINTERMANN, HE ;
KREBS, P ;
GRISEL, A .
THIN SOLID FILMS, 1993, 236 (1-2) :87-90
[7]  
HANNI W, 1995, P 3 INT C APPL DIAM, P83
[8]   X-RAY PHOTOELECTRON DIFFRACTION ON THE NICKEL DIAMOND, THE SILICON DIAMOND AND THE GOLD DIAMOND INTERFACE [J].
KUTTEL, OM ;
SCHALLER, E ;
OSTERWALDER, J .
DIAMOND AND RELATED MATERIALS, 1995, 4 (5-6) :612-616
[10]  
MULLER C, 1993, DIAM RELAT MATER, V2, P1211