Post patterning meso porosity creation: A potential solution for pore sealing

被引：17

作者：

Caluwaerts, R ^{[1
]}

Van Hove, M ^{[1
]}

Beyer, G ^{[1
]}

Hoofman, RJOM ^{[1
]}

Struyf, H ^{[1
]}

Verheyden, GJAM ^{[1
]}

Waeterloos, J ^{[1
]}

Tokei, Z ^{[1
]}

Iacopi, F ^{[1
]}

Carbonell, L ^{[1
]}

Le, QT ^{[1
]}

Das, A ^{[1
]}

Vos, I ^{[1
]}

Demuynck, S ^{[1
]}

Maex, K ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

PROCEEDINGS OF THE IEEE 2003 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2003年

关键词：

D O I：

10.1109/IITC.2003.1219765

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The creation of meso porosity in single damascene structures after patterning has been investigated to facilitate the sealing of the sidewalls by iPVD barriers. The dielectric stack consists of developmental porous SiLK* (v7) resin (*SiLK is a trademark of The Dow Chemical Company) and a chemical vapor deposited hard mask. Porous SiLK (v7) resin was selected since the temperature of vitrification of the material is lower than the temperature of porogen burn out. Creation of meso porosity after patterning results in smooth trench sidewalls, leading to an improved iPVD barrier integrity, as opposed to the conventional process sequence, which gives rise to large, exposed pores at the sidewall.

引用

页码：242 / 244

页数：3