Growth and luminescence of zinc-blende-structured ZnSe nanowires by metal-organic chemical vapor deposition

被引：99

作者：

Zhang, XT ^{[1
]}

Liu, Z ^{[1
]}

Leung, YP ^{[1
]}

Li, Q ^{[1
]}

Hark, SK ^{[1
]}

机构：

[1] Chinese Univ Hong Kong, Dept Phys, Shatin, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 26期

关键词：

D O I：

10.1063/1.1638633

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zinc-blende-structured single-crystalline ZnSe nanowires and nanoribbons were grown on (001) silicon substrates by metal-organic chemical vapor deposition. The as-synthesized nanowires were characterized by x-ray powder diffraction and scanning electron microscopy. The diameters of the nanowires range from a few tens to 100 nm and the typical length is in the tens of micrometers. Individual strands of the nanowires were examined by transmission electron microscopy and cathodoluminescence spectroscopy. They were found to be single crystals elongated along the <11 (2) over bar > crystallographic direction. Strong and narrow room-temperature band-gap light emissions indicate that their optical and electronic properties rival those of the epitaxial layers employed in diode lasers. A possible growth mechanism of the ZnSe nanowires is also discussed. (C) 2003 American Institute of Physics.

引用

页码：5533 / 5535

页数：3

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