Integrated current sensing device for micro IDDQ test

被引：2

作者：

Nose, K ^{[1
]}

Sakurai, T ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan

来源：

SEVENTH ASIAN TEST SYMPOSIUM (ATS'98), PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ATS.1998.741633

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A current sensing device, namely Hall Effect MOSFET (HEMOS) is proposed. It is experimentally shown that the MEMOS enables a non-contacting, and non-disturbing current measurement, which can be used for IDDQ testing of internal circuit blocks. The HEMOS can be manufactured and integrated in a VLSI with the conventional CMOS process. The HEMOS is also helpful to establish the low standby current by identifying the locations of large standby power consumption (possibly a design fault) using only a few pads.

引用

页码：323 / 326

页数：4