Luminescence from stacking faults in gallium nitride

被引：328

作者：

Liu, R ^{[1
]}

Bell, A

Ponce, FA

Chen, CQ

Yang, JW

Khan, MA

机构：

[1] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

[2] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 02期

关键词：

D O I：

10.1063/1.1852085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A direct correlation has been established between stacking faults in a-plane GaN epilayers and luminescence peaks in the 3.29-3.41 eV range. The structural features of the stacking faults were determined by diffraction-contrast transmission electron microscopy, while the optical emission characteristics were observed by highly spatially resolved monochromatic cathodoluminescence. The studies were performed in the exact same regions of thinned foils. We find that stacking faults on the basal plane are responsible for the strong emission at similar to3.14 eV. Luminescence peaks at similar to3.33 and similar to3.29 eV are associated with the presence of stacking faults on prismatic a planes and partial dislocations at the stacking fault boundaries, respectively. (C) 2005 American Institute of Physics.

引用

页码：021908 / 1

页数：3

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