Measurements of the low-frequency-gain fluctuations of a 30-GHz high-electron-mobility-transistor cryogenic amplifier

被引：28

作者：

Jarosik, NC

机构：

[1] Princeton University, Department of Physics, Princeton

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1996年 / 44卷 / 02期

基金：

美国国家科学基金会;

关键词：

Manuscript received February 4; 1994; revised November 12; 1995. This paper was supported in part by JPL # 959556 and NSF Grant NAGW-2801. The author is with Princeton University; Department of Physics; Princeton; NJ 08544 USA. Publisher Item Identifier S 0018-9480(96)01442-1;

D O I：

10.1109/22.481567

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-frequency-gain fluctuations of a 30-GHz cryogenic HEMT amplifier have been measured with the input of the amplifier connected to a 15-K load, Effects of fluctuations of other components of the test set-up were eliminated by use of a power-power correlation technique. Strong correlation between output power fluctuations of the amplifier and drain current fluctuations of the transistors comprising the amplifier are observed. The existence of these correlations introduces the possibility of regressing some of the excess noise from the HEMT amplifier's output using the measured drain currents.

引用

页码：193 / 197

页数：5

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