Impact of nitridation engineering on microscopic SILC characteristics of sub-10-nm tunnel dielectrics

被引：19

作者：

Ogata, T ^{[1
]}

Inoue, M ^{[1
]}

Nakamura, T ^{[1
]}

Tsuji, N ^{[1
]}

Kobayashi, K ^{[1
]}

Kawase, K ^{[1
]}

Kurokawa, H ^{[1
]}

Kaneoka, T ^{[1
]}

Ohno, Y ^{[1
]}

Miyoshi, H ^{[1
]}

机构：

[1] Mitsubishi Elect Corp, ULSI Dev Ctr, Itami, Hyogo 6648641, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746429

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have statistically analyzed 28,800 cells of arrayed stacked gate transistors, and, for the first time, we discuss the effectiveness of NO and N2O nitridation in suppressing microscopic SILC (mSILC). We have found that NO nitridation is more effective in suppressing the mSILC than N2O nitridation and is very promising for the reduction of bit failures.

引用

页码：597 / 600

页数：4

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[2]

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[3]

Yamane S., 1996, Proceedings of the Eighth Euromicro Workshop on Real-Time Systems, P108, DOI 10.1109/EMWRTS.1996.557829

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YASUDA M, 1991, 1991 INT C SOL STAT, P237

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