Firing condition for entire reactions of fluorides with water vapor in metalorganic deposition method using trifluoro acetate

被引：27

作者：

Araki, T

Takahashi, Y

Yamagiwa, K

Iijima, Y

Takeda, K

Yamada, Y

Shibata, J

Hirayama, T

Hirabayashi, I

机构：

[1] ISTEC, Superconduct Res Lab, Div 5, Atsuta Ku, Nagoya, Aichi 4568587, Japan

[2] Fujikura Ltd, Mat Technol Lab, Koto Ku, Tokyo 1358512, Japan

[3] Japan Fine Ceram Ctr, Atsuta Ku, Nagoya, Aichi 4568587, Japan

来源：

PHYSICA C | 2001年 / 357卷

关键词：

YBCO; process condition; metal tape; trifluoroacetate;

D O I：

10.1016/S0921-4534(01)00467-1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To obtain the YBa2Cu3O7, (YBCO) film on buffered metal tapes, we have to fire films below 800 degreesC and avoid formation of BaF2 in the films which leads to low J(c) by metalorganic deposition using trifluoroacetate method. By estimating each process condition to reaction rate of fluorides with water vapor in precursor, we can established firing profile for YBCO film on buffered metal substrate at 725 degreesC. With the profile, we can successfully obtained YBCO film on CeO2/YSZ/hastelloy, which has critical current density (J(c)) of 1.72 MA/cm(2) (77 K, 0 T) and thickness of 1860 Angstrom. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：991 / 994

页数：4

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