Grasping SOI floating-body effects

被引：28

作者：

Krishnan, S ^{[1
]}

Fossum, JG

机构：

[1] AMD, Technol Dev Grp, Sunnyvale, CA USA

[2] Univ Florida, Gainesville, FL 32611 USA

来源：

IEEE CIRCUITS & DEVICES | 1998年 / 14卷 / 04期

关键词：

D O I：

10.1109/101.708479

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article qualitatively elucidates the device physics underlying DC and transient floating body-effects, clearly implying their influence on circuits, and thereby giving good insight on partially depleted/silicon on insulator (PD/SOI) CMOS design issues. It also examines special but doable device and circuit designs for controlling floating-body effects, showing through simulation how PD/SOI offers a significant performance advantage over bulk silicon in low-voltage applications, thereby conveying an assurance that reliable SOI CMOS design is feasible.

引用

页码：32 / 37

页数：6