Correlation between exchange bias and pinned interfacial spins -: art. no. 017203

被引：533

作者：

Ohldag, H

Scholl, A

Nolting, F

Arenholz, E

Maat, S

Young, AT

Carey, M

Stöhr, J

机构：

[1] Stanford Synchrotron Radiat Lab, Stanford, CA 94309 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA

[3] Univ Dusseldorf, Inst Angew Phys, D-40225 Dusseldorf, Germany

[4] Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland

[5] Hitachi global Storage Technol, San Jose Res Ctr, San Jose, CA 95120 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.91.017203

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using x-ray magnetic circular dichroism, we have detected the very interfacial spins that are responsible for the horizontal loop shift in three different exchange bias sandwiches, chosen because of their potential for device applications. The "pinned" uncompensated interfacial spins constitute only a fraction of a monolayer and do not rotate in an external magnetic field since they are tightly locked to the antiferromagnetic lattice. A simple extension of the Meiklejohn and Bean model is proposed to account quantitatively for the exchange bias fields in the three studied systems from the experimentally determined number of pinned moments and their sizes.

引用

页数：4

共 21 条

[1] Spin structure at the interface of exchange biased FeMn/Co bilayers [J].