Improved beam quality for high power tapered laser diodes with LMG (low modal gain) epitaxial layer structures

被引：18

作者：

Mikulla, M ^{[1
]}

Schmitt, A ^{[1
]}

Chazan, P ^{[1
]}

Wetzel, A ^{[1
]}

Walther, M ^{[1
]}

Kiefer, R ^{[1
]}

Pletschen, W ^{[1
]}

Braunstein, J ^{[1
]}

Weimann, G ^{[1
]}

机构：

[1] Fraunhofer Inst Angew Festkorperphys, D-79108 Freiburg, Germany

来源：

IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MID-INFRARED II | 1998年 / 3284卷

关键词：

high brightness; high power semiconductor lasers; low modal gain; beam filamentation; near diffraction limited;

D O I：

10.1117/12.304433

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In high-power, high-brightness laser diodes, beam filamentation is one of the main physical effects that Limit the device performance. Due to the interaction between the optical power and the carrier density in the active region of broad area devices, spatial hole-burning leads to an inhomogeneous optical index that causes the degradation of the optical beam profile. We show, that epitaxial layer structures with low optical confinement are much more insensitive to beam filamentation because of their reduced differential gain. Experimentally we find, that the beam quality of tapered laser ocillators can be improved by an order of magnitude, when epitaxial layer structures with reduced modal gain are used for the device fabrication. 2 mm long tapered devices with a 200 mu m wide output facet show near diffraction limited farfield profiles up to output powers of more than 2 W cw.

引用

页码：72 / 79

页数：8