Broadband, 0.25μm CMOS LNAs with Sub-2dB NF for GSM applications

被引：18

作者：

Huang, QT ^{[1
]}

Orsatti, P ^{[1
]}

Piazza, F ^{[1
]}

Yoshitomi, T ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Integrated Syst Lab, CH-8092 Zurich, Switzerland

来源：

IEEE 1998 CUSTOM INTEGRATED CIRCUITS CONFERENCE - PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/CICC.1998.694908

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Noise figures below 2dB are generally hard to achieve by integrated LNAs with few external components, whether the technology is GaAs or bipolar. This paper reports the design of CMOS LNAs with NF as low as 1.74, while providing 50 Omega impedance at both input and output, good linearity for both small (IP3) and large signals (CP) and insensitivity to component tolerances. The best LNA consumes only 10.8mA and requires only one external inductor.

引用

页码：67 / 70

页数：4