Photoluminescence and Raman scattering of electrochemically deposited CdS films

被引：7

作者：

Shirai, K ^{[1
]}

Goto, F ^{[1
]}

Ichimura, M ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL, CTR COOPERAT RES, NAGOYA, AICHI 466, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 11B期

关键词：

photoluminescence; Raman scattering; CdS; annealing; electrochemical deposition;

D O I：

10.1143/JJAP.35.L1483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CdS films were electrochemically deposited from acidic solutions containing CdSO4 and Na2S2O3. Photoluminescence spectra of these films were measured using the 325 nm Line of a He-Cd laser as the light source at 77K. For the films annealed at 300 degrees C, we observed overlapping peaks at 488 and 502 nm. The peak at 488 nm was assigned to the band-edge emission of CdS. The peak at 502 nm was thought to be due to point defects generated by annealing. bs the annealing temperature was raised, the band-edge emission became weaker and the luminescence due to the point defects shifted to longer wavelengths. These results were compared with the results of Raman scattering.

引用

页码：L1483 / L1485

页数：3

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