Scanning tunneling microscope-induced luminescence of GaN at threading dislocations

被引：25

作者：

Evoy, S ^{[1
]}

Craighead, HG

Keller, S

Mishra, UK

DenBaars, SP

机构：

[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 01期

关键词：

D O I：

10.1116/1.590512

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the scanning tunneling microscope-induced luminescence of GaN at low temperature. The emitted photons are investigated using bias spectroscopy techniques. Near band edge emission is detected at low temperature at tip biases exceeding V-t=3.25 V. Corresponding luminescence images reveal a correlation between threading dislocations and nonradiative recombination. A hole diffusion length of L-D= 30-55 nm is evaluated from the extent of the nonluminescent areas. Preliminary assessment of luminescence morphology is performed with standard cathodoluminescence. (C) 1999 American Vacuum Society. [S0734-211X(99)03601-X].

引用

页码：29 / 32

页数：4

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