Contact Resistance and Megahertz Operation of Aggressively Scaled Organic Transistors

被引：211

作者：

Ante, Frederik ^{[1
]}

Kaelblein, Daniel ^{[1
]}

Zaki, Tarek ^{[2
]}

Zschieschang, Ute ^{[1
]}

Takimiya, Kazuo ^{[3
]}

Ikeda, Masaaki ^{[4
]}

Sekitani, Tsuyoshi ^{[5
]}

Someya, Takao ^{[5
]}

Burghartz, Joachim N. ^{[2
]}

Kern, Klaus ^{[1
,6
]}

Klauk, Hagen ^{[1
]}

机构：

[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

[2] Inst Mikroelekt IMS CHIPS, D-70569 Stuttgart, Germany

[3] Hiroshima Univ, Inst Adv Mat Res, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 724, Japan

[4] Nippon Kayaku Co Ltd, Funct Chem R&D Labs, Kita Ku, Tokyo 115, Japan

[5] Univ Tokyo, Dept Elect Engn, Tokyo 113, Japan

[6] Ecole Polytech Fed Lausanne, Inst Phys Mat Condensee, CH-1015 Lausanne, Switzerland

来源：

SMALL | 2012年 / 8卷 / 01期

关键词：

organic thin-film transistors; contact length; contact resistance; cutoff frequency; THIN-FILM TRANSISTORS; PERFORMANCE; MATRIX;

D O I：

10.1002/smll.201101677

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Bottom-gate, top-contact organic thin-film transistors (TFTs) with excellent static characteristics (on/off ratio: 10 7; intrinsic mobility: 3 cm 2 (V s) -1) and fast unipolar ring oscillators (signal delay as short as 230 ns per stage) are fabricated. The significant contribution of the transfer length to the relation between channel length, contact length, contact resistance, effective mobility, and cutoff frequency of the TFTs is theoretically and experimentally analyzed. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：73 / 79

页数：7

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