Out-of-plane high-Q inductors on low-resistance silicon

被引:63
作者
Chua, CL [1 ]
Fork, DK [1 ]
Van Schuylenbergh, K [1 ]
Lu, JP [1 ]
机构
[1] Palo Alto Res Ctr, Palo Alto, CA 94304 USA
关键词
integrated coil; integrated inductor; micro-coil; micro-inductor; three-dimensional (3-D) coil;
D O I
10.1109/JMEMS.2003.820274
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Integrated high-Q coils are much sought after because they enable high-quality radio-frequency circuits that do not rely on off-chip discretes. We present a novel surface micro-machined inductor with its coil axis parallel to the substrate plane. Coils fabricated on standard unaltered low-resistance silicon exhibit record-high-quality factors (Q) of over 70 at 1 GHz. The devices are made by three-dimensional (3-D) self-assembly of stress-engineered structures fabricated with standard semiconductor batch processing techniques. We also designed, fabricated, and characterized silicon Bi-CMOS L-C oscillators built around these coils. Compared side by side against state-of-the-art planar spirals, they produce a 12.3 dB lower phase noise at 100 kHz offset, and 14.6 dB after normalizing to frequency and power.
引用
收藏
页码:989 / 995
页数:7
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