Effects of pn-junctions bordering on surfaces investigated by means of 2D-modeling

被引：34

作者：

Kühn, R ^{[1
]}

Fath, P ^{[1
]}

Bucher, E ^{[1
]}

机构：

[1] Univ Konstanz, D-78464 Constance, Germany

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915768

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Several new solar cell designs, among them the Emitter Wrap Through (EWT) and the POWER solar cell, suffer from reduced fill factors. These cells have interdigitated p- and n-type regions. At the margin of these regions, the p-n junction borders on the surface causing additional recombination. We investigate by means of two-dimensional modeling the recombination mechanisms occurring in such device regions, and we give an experimental example. It is shown that a poor quality of the surface passivation near to where the pn-junction borders, is mainly responsible for the observed losses in fill factor and open-circuit voltages.

引用

页码：116 / 119

页数：4

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