Efficient Light-Emitting Diodes Based on Nanocrystalline Perovskite in a Dielectric Polymer Matrix

被引:621
作者
Li, Guangru [1 ]
Tan, Zhi-Kuang [1 ]
Di, Dawei [1 ]
Lai, May Ling [1 ]
Jiang, Lang [1 ]
Lim, Jonathan Hua-Wei [1 ]
Friend, Richard H. [1 ]
Greenham, Neil C. [1 ]
机构
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
基金
英国工程与自然科学研究理事会; 新加坡国家研究基金会;
关键词
Perovskite light emitting diode; perovskite-polymer blend; perovskite nanocrystals; petovskite morphology; SOLAR-CELLS;
D O I
10.1021/acs.nanolett.5b00235
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Electroluminescence in light-emitting devices relies on the encounter and radiative recombination of electrons and holes in the emissive layer. In organometal halide perovskite light-emitting diodes, poor film formation creates electrical shunting paths, where injected charge carriers bypass the perovskite emitter, leading to a loss in electroluminescence yield. Here, we report a solution-processing method to block electrical shunts and thereby enhance electroluminescence quantum efficiency in perovskite devices. In this method, a blend of perovskite and a polyimide precursor dielectric (PIP) is solution-deposited to form perovskite nanocrystals in a thin-film matrix of PIP. The PIP forms a pinhole-free charge-blocking layer, while still allowing the embedded perovskite crystals to form electrical contact with the electron and hole-injection layers. This modified structure reduces nonradiative current losses and improves quantum efficiency by 2 orders of magnitude, giving an external quantum efficiency of 1.2%. This simple technique provides an alternative route to circumvent film formation problems in perovskite optoelectronics and offers the possibility of flexible and high-performance light-emitting displays.
引用
收藏
页码:2640 / 2644
页数:5
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