Characterisation of indium phosphide using terahertz radiation

被引：1

作者：

Causley, RL ^{[1
]}

Lewis, RA ^{[1
]}

机构：

[1] Univ Wollongong, Inst Superconducting & Elect Mat, Wollongong, NSW 2522, Australia

来源：

SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/SIM.2000.939206

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Specimens of undoped, n-type and p-type bulk InP have been investigated using THz radiation. Reflection spectroscopy permits determination of the TO and LO phonon energies as well as the carrier concentration. Absorption spectroscopy reveals transitions between impurity states. We report the first absorption spectrum of an acceptor in InP. The transition energies agree well with electronic Raman scattering and photoluminescence data.

引用

页码：101 / 104

页数：4

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