Ge-Si intermixing in Ge quantum dots on Si

被引：40

作者：

Boscherini, F

Capellini, G

Di Gaspare, L

De Seta, M

Rosei, F

Sgarlata, A

Motta, N

Mobilio, S

机构：

[1] Univ Bologna, Dipartimento Fis, INFM, I-40126 Bologna, Italy

[2] Univ Roma Tre, Dipartimento Fis, INFM, Rome, Italy

[3] Univ Roma Tor Vergata, Dipartimento Fis, INFM, I-00173 Rome, Italy

[4] Ist Nazl Fis Nucl, Lab Nazl Frascati, Rome, Italy

来源：

THIN SOLID FILMS | 2000年 / 380卷 / 1-2期

关键词：

quantum dots interdiffusion; X-ray absorption spectroscopy; synchrotron radiation;

D O I：

10.1016/S0040-6090(00)01496-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have provided direct evidence for the presence of considerable Si-Ge intermixing in strained and unstrained Ge quantum dots deposited on Si(001) and Si(111). The local structure around Ce was probed by using Ge K-edge X-ray absorption spectroscopy; complementary evidence for intermixing was provided by AFM and STM studies. These results implied that the strain energy in the dots was reduced by Si atoms diffusing into the dots, resulting in a modified form of Stranski-Krastanov growth. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：173 / 175

页数：3

共 11 条

[1] Ge-Si intermixing in Ge quantum dots on Si(001) and Si(111) [J].