Laser writing of quantum well intermixed GaInAsP/InP microstructures

被引：9

作者：

Dubowski, JJ ^{[1
]}

Charbonneau, S ^{[1
]}

Poole, PJ ^{[1
]}

Roth, AP ^{[1
]}

Lacelle, C ^{[1
]}

Buchanan, M ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

LASER APPLICATIONS IN MICROELECTRONIC AND OPTOELECTRONIC MANUFACTURING III | 1998年 / 3274卷

关键词：

photonic integrated circuits; quantum well intermixing; laser annealing; laser writing;

D O I：

10.1117/12.309526

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Laser-induced intermixing of quantum well (QW) and barrier material has been studied in GaInAsP/InP laser heterostructures grown by chemical beam epitaxy. Samples were exposed to CW Nd:YAG laser radiation for 7.5 to 300 sec with power densities in the range of 3 to 9 W/mm(2). With a laser beam tightly focused on the surface, this approach has the potential to "write" lines of arbitrary shapes of quantum well intermixed material. A 90 nn blue shift of the QW PL peak was demonstrated in the material processed with a triple pass of the 7.5 W/mm(2) laser beam. This result has been achieved with a writing speed of 20 mu m/s. The influence of laser power, dwell time per pass and total irradiation time of the Nd:YAG laser beam on the extent of the blue shift and the optical properties of GaInAsP-based quantum well structures were investigated.

引用

页码：53 / 59

页数：3