DLTS study of nucleation stage of oxygen precipitate in silicon

被引：3

作者：

Antonova, IV ^{[1
]}

Popov, VP ^{[1
]}

Shaimeev, SS ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

PHYSICA B | 1998年 / 253卷 / 1-2期

关键词：

silicon; oxygen precipitates; nucleation;

D O I：

10.1016/S0921-4526(98)00371-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Oxygen precipitate formation at 600-700 degrees C was studied by a new method based on DLTS data analysis. OP formation goes on through the creation of oxygen-rich local areas in the silicon matrix. The accumulation of oxygen atoms in these areas with annealing time leads to the phase transformation starting with some critical oxygen concentration. OP nuclei has a friable structure with a high surface-to-volume ratio. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：123 / 130

页数：8

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