Epitaxial Ti2GeC, Ti3GeC2, and Ti4GeC3 MAX-phase thin films grown by magnetron sputtering

被引：127

作者：

Högberg, H ^{[1
]}

Eklund, P ^{[1
]}

Emmerlich, J ^{[1
]}

Birch, J ^{[1
]}

Hultman, L ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys IFM, Thin Film Phys Div, SE-58183 Linkoping, Sweden

来源：

JOURNAL OF MATERIALS RESEARCH | 2005年 / 20卷 / 04期

关键词：

D O I：

10.1557/JMR.2005.0105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have grown single-crystal thin films of Ti2GeC and T3GeC2 and a new phase Ti4GeC3, as well as two new intergrown MAX-structures, Ti5Ge2C3 and Ti7Ge2C5. Epitaxial films were grown on Al2O3(0001) substrates at 1000 degrees C using direct current magnetron sputtering. X-ray diffraction shows that Ti-Ge-C MAX-phases require higher deposition temperatures in a narrower window than their Ti-Si-C correspondences do, while there are similarities in phase distribution. Nanoindentation reveals a Young's modulus of 300 GPa, lower than that of Ti3SiC2. Four-point probe measurements yield resistivity values of 50-200 mu Omega cm. The lowest value is obtained for phase-pure T3GeC2(0001) films,

引用

页码：779 / 782

页数：4

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