Characterization of bulk GaN grown by sublimation technique

被引：7

作者：

Naoi, Y ^{[1
]}

Kobatake, K ^{[1
]}

Kurai, S ^{[1
]}

Nishino, K ^{[1
]}

Sato, H ^{[1
]}

Nozaki, M ^{[1
]}

Sakai, S ^{[1
]}

Shintani, Y ^{[1
]}

机构：

[1] Univ Tokushima, Dept Elect & Elect Engn, Tokushima 7708506, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

bulk; GaN; sublimation; SIMS; XRD;

D O I：

10.1016/S0022-0248(98)00218-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have characterized a bulk GaN grown by sublimation technique by means of the high resolution X-ray diffraction measurements: the secondary ion mass spectrometry measurements, the Raman spectroscopy measurements and the resistivity measurements. The results indicated that a bulk GaN was of relatively high purity with a very high crystal perfection. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：163 / 166

页数：4

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