A new strategy for the fabrication of cost-effective silicon solar cells

被引:6
作者
Hezel, R [1 ]
Metz, A [1 ]
机构
[1] Inst Solarenergieforsch Hameln Emmerthal, D-31860 Emmerthal, Germany
关键词
solar cell; c-Si; surface grooving; angle evaporation; surface passivation; silicon nitride;
D O I
10.1016/S0960-1481(98)00051-2
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Fabrication of solar cells with very high efficiencies currently requires extremely complex processing. In order to make photovoltaics an economical large scale source of energy, very high efficiencies have to be achieved by low-cost processing. The innovative approach for the cost-effective production of highly efficient silicon solar cells presented in this paper is characterised by only four simple and environmentally safe large-area fabrication steps. The basic processing sequence consists of: (i) mechanical surface grooving, (ii) simple diffusion or inversion, (iii) shallow angle metal evaporation, and (iv) plasma silicon nitride deposition. Cell design, fabrication techniques and processing sequences for metal-insulator-semiconductor contacted diffused n(+)-p junction (MIS-n(+)p) and MIS-inversion-layer (MIS-IL) silicon solar cells are outlined. The new simple approach turned out to be most successful, as demonstrated by mechanically grooved MIS-n(+)p silicon solar cells with efficiencies above 21% using exclusively aluminium as metallisation. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:83 / 88
页数:6
相关论文
共 9 条
[1]  
Aberle AG, 1997, PROG PHOTOVOLTAICS, V5, P29, DOI 10.1002/(SICI)1099-159X(199701/02)5:1<29::AID-PIP149>3.0.CO
[2]  
2-M
[3]  
[Anonymous], 24 IEEE PHOT SPEC C
[4]  
HEZEL R, 1991, P 10 EUR PHOT SOL EN, P511
[5]  
HEZEL R, 1995, P 13 EUR PHOT SOL EN, P115
[6]   Novel cost-effective bifacial silicon solar cells with 19.4% front and 18.1% rear efficiency [J].
Hubner, A ;
Aberle, AG ;
Hezel, R .
APPLIED PHYSICS LETTERS, 1997, 70 (08) :1008-1010
[7]   Record low surface recombination velocities on 1 Omega cm p-silicon using remote plasma silicon nitride passivation [J].
Lauinger, T ;
Schmidt, J ;
Aberle, AG ;
Hezel, R .
APPLIED PHYSICS LETTERS, 1996, 68 (09) :1232-1234
[8]  
METZ A, 1997, IN PRESS 26 IEEE PVS
[9]  
VERBEEK M, 1996, 25 IEEE PHOT SPEC C, P521