Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells

被引：72

作者：

O'Neill, JP ^{[1
]}

Ross, IM ^{[1
]}

Cullis, AG ^{[1
]}

Wang, T ^{[1
]}

Parbrook, PJ ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 10期

关键词：

D O I：

10.1063/1.1606105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a study of the morphology and composition of InxGa1-xN/GaN multiple-quantum-well structures and their sensitivity to electron-beam damage. We have employed high-resolution transmission electron microscopy, energy dispersive x-ray analysis, and scanning transmission electron microscopy. Microstructural analysis was performed to investigate the dynamical effects of electron-beam irradiation on the relative indium distribution within the quantum wells. Exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of similar to100 pA/cm(2), was found to induce significant nanoclustering of indium within the multiple-quantum wells. These findings highlight the need for caution when reporting the presence of indium-rich clusters within InGaN/GaN multiple-quantum wells studied in the transmission electron microscope. (C) 2003 American Institute of Physics.

引用

页码：1965 / 1967

页数：3

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