Photoluminescence studies of Si-doped AlN epilayers

被引：45

作者：

Nam, KB ^{[1
]}

Nakarmi, ML ^{[1
]}

Li, J ^{[1
]}

Lin, JY ^{[1
]}

Jiang, HX ^{[1
]}

机构：

[1] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 14期

关键词：

D O I：

10.1063/1.1616199

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si-doped AlN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates. Deep ultraviolet picosecond time-resolved photoluminescence (PL) spectroscopy has been employed to study the optical transitions in the grown epilayers. The donor bound exciton (or I-2) transition was found to be the dominant recombination line in Si-doped AlN epilayers at 10 K and its emission intensity decreases with increasing Si dopant concentration. Doping-induced PL emission linewidth broadening and band-gap renormalization effects have also been observed. Time-resolved PL studies revealed a linear decrease of PL decay lifetime with increasing Si dopant concentration, which was believed to be a direct consequence of the doping-enhanced nonradiative recombination rates. (C) 2003 American Institute of Physics.

引用

页码：2787 / 2789

页数：3

共 10 条

[1] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J].