Impurity solubility limits in ionic crystals, with application to Cu2O

被引:16
作者
Tsur, Y [1 ]
Riess, I [1 ]
机构
[1] Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel
来源
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS | 1998年 / 207卷
关键词
solubility limit; solid solution; cuprous oxide; Co doped Cu2O; Ag doped Cu2O;
D O I
10.1524/zpch.1998.207.Part_1_2.181
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have examined the possibility to dope, in particular Cu2O, with a series of aliovalent and isovalent ions. Detailed measurements were done on Ag and Co doping. Other ions considered were: Li+, Na+, K+, Ni2+, Bi3+ and Wi+ (i = 4 or 6). The solubilities found were low, usually below similar to 0.1 cation% except for Ag+ which dissolved with 2 cation%. An analysis is presented that allows calculating the solubility limits. The concept of "corresponding native defects" of the host material is introduced. With a knowledge of the concentration of the "corresponding native defects", the standard chemical potential of the materials involved and the shear modulus of the host material, one can calculate the solubilities of the impurities. Using the results of that analysis to fit the experimental data the shear modulus of Cu2O is determined to be 1.7 * 10(11) N/m(2), a value obtained from consideration of the strain on a microscopic, atomic scale.
引用
收藏
页码:181 / 213
页数:33
相关论文
共 56 条
[1]  
AGRINSKAYA NV, 1994, SEMICONDUCTORS+, V28, P843
[2]  
[Anonymous], 1983, NONSTOICHIOMETRY DIF
[3]  
BAN Y, 1972, NBS SPEC PUBL, V364, P353
[4]  
BRINKSMAN RN, 1992, SOLAR ENERGY MAT SOL, V27, P361
[5]   GLYCINE NITRATE COMBUSTION SYNTHESIS OF OXIDE CERAMIC POWDERS [J].
CHICK, LA ;
PEDERSON, LR ;
MAUPIN, GD ;
BATES, JL ;
THOMAS, LE ;
EXARHOS, GJ .
MATERIALS LETTERS, 1990, 10 (1-2) :6-12
[6]  
DARKEN LS, 1953, PHYSICAL CHEM METALS, pCH4
[7]   IONIC CONDUCTIVITY OF CUPROUS OXIDE AS FUNCTION OF ITS COMPOSITION AROUND 400 DEGREES C [J].
DELLACHE.J ;
BALESDEN.D ;
RILLING, J .
JOURNAL DE CHIMIE PHYSIQUE ET DE PHYSICO-CHIMIE BIOLOGIQUE, 1970, 67 (02) :360-&
[8]  
EMSLEY J, 1989, ELEMENTS, P232
[9]   Fundamental doping limits in wide gap II-VI compounds [J].
Faschinger, W .
JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) :221-228
[10]   DOPING LIMITATIONS IN WIDE-GAP II-VI COMPOUNDS BY FERMI-LEVEL PINNING [J].
FASCHINGER, W ;
FERREIRA, S ;
SITTER, H .
JOURNAL OF CRYSTAL GROWTH, 1995, 151 (3-4) :267-272