Optical properties of AlN thin films correlated with sputtering conditions

被引:30
作者
Gadenne, M
Plon, J
Gadenne, P
机构
[1] Univ Paris 06, CNRS, URA 781, Lab Opt Solides, F-75252 Paris 05, France
[2] Univ Versailles, Lab Magnetisme & Opt, URA D1531, F-78035 Versailles, France
关键词
aluminium nitride; ellipsometry; optical properties; optical spectroscopy;
D O I
10.1016/S0040-6090(98)00816-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Optical measurements (spectrophotometry in the range 0.2-25 mu m and spectroscopic ellipsometry in the range 0.35-0.9 mu m) have been performed on AIN thin films of varying thicknesses (0.07-0.7 mu m) using two different sputtering methods. Since aluminium nitride has a semi-conducting behaviour, absorption, due to direct and indirect transitions, it is observed in the UV range and the band gap can thus be determined. In the visible range; the absorption is very low and the Sellmeier formula provides a correct description of the real part of the complex index. In the middle infrared range, optical properties are dominated by phonon behaviour, and the measurements an well described by a two oscillator simulation. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:251 / 255
页数:5
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