Low temperature nafion bonding of silicon wafers

被引：23

作者：

Ilic, B ^{[1
]}

Neuzil, P

Stanczyk, T

Czaplewski, D

Maclay, GJ

机构：

[1] Univ Illinois, Dept Elect Engn & Comp Sci, Microfabricat Applicat Lab, Chicago, IL 60607 USA

[2] Stanford Univ, Edward L Ginzton Lab, Stanford, CA 94305 USA

[3] Univ Illinois, Dept Bioengn, Microfabricat Applicat Lab, Chicago, IL 60607 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 1999年 / 2卷 / 02期

关键词：

D O I：

10.1149/1.1390743

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Silicon wafer bonding using intermediate submicrometer Nafion layers was investigated with emphasis in the low temperature region. Bonding was achieved by heating Nafion-coated wafer pairs. Infrared images revealed voids at annealing temperatures of less than 75 degrees C. In the transition region between 75 and 120 degrees C void-free bonds were achieved; however, the Nafion was chemically unstable. Chemically stable Nafion bond formation can be accomplished at annealing temperatures in excess of 120 degrees C. (C) 1999 The Electrochemical Society. S1099- 0062( 98) 09- 009- 9. All rights reserved.

引用

页码：86 / 87

页数：2

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