Coplanar waveguides on silicon substrate with thick oxidized porous silicon (OPS) layer

被引：32

作者：

Nam, CM ^{[1
]}

Kwon, YS ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1998年 / 8卷 / 11期

关键词：

coplanar waveguide (CPW); oxidized porous silicon (OPS); silicon substrate;

D O I：

10.1109/75.736246

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The problem of high dielectric loss of waveguide on silicon in the microwave region can be solved by utilizing a thick silicon dioxide layer that is formed by silicon substrate anodization and oxidation processes. Coplanar waveguides (CPW's) are fabricated on silicon substrate with a 20-mu m-thick oxidized porous silicon (OPS) layer and demonstrate very high performance of 0.1-dB/mm attenuation at 4 GHz, Thus, the OPS process is promising for gigaherz applications of silicon substrates.

引用

页码：369 / 371

页数：3

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