Degradation behavior of PTCR BaTiO3 in reducing gases

被引:10
作者
Er, G [1 ]
Takeuchi, N [1 ]
Ishida, S [1 ]
Hosokawa, K [1 ]
Yamazaki, K [1 ]
Kitoh, N [1 ]
Namikawa, Y [1 ]
Niimi, H [1 ]
机构
[1] MURATA MFG CO LTD, YOKAICHI PLANT, YOKKAICHI, SHIGA 527, JAPAN
关键词
PTCR BaTiO3; degradation; surface acceptor states; reducing gas; hydrogen atom;
D O I
10.2109/jcersj.104.1091
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Degradation of positive temperature coefficient of resistivity (PTCR) properties of semiconducting BaTiO3 ceramics that were annealed in reducing gases was studied from a mechanistic viewpoint mainly by measuring the electrical and dielectric properties, using reflectance and ESR spectroscopies, as well as by gas analysis using a quadrupole mass spectrometer. The results showed that after annealing, the density of the surface acceptor states decreased whereas the concentration of conduction electrons increased. The degradation in PTCR properties was assumed to be caused by the diffusion of hydrogen atoms that were formed from reducing gases along the grain boundaries. These atoms reacted with chemisorbed oxygen ions, releasing trapped electrons and lowering the barrier potential.
引用
收藏
页码:1091 / 1096
页数:6
相关论文
共 22 条
[1]  
ALLAK H, 1987, J PHYS D, V20, P1645
[2]   GRAIN-BOUNDARY CHEMISTRY OF BARIUM-TITANATE AND STRONTIUM-TITANATE .1. HIGH-TEMPERATURE EQUILIBRIUM SPACE-CHARGE [J].
CHIANG, YM ;
TAKAGI, T .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (11) :3278-3285
[3]   INTERFACIAL SEGREGATION IN PEROVSKITES .2. EXPERIMENTAL-EVIDENCE [J].
DESU, SB ;
PAYNE, DA .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (11) :3398-3406
[4]   HIGH-PRESSURE SYNTHESIS AND ELECTRICAL-PROPERTIES OF BATIO3-XFX [J].
ENDO, T ;
KOBAYASHI, T ;
SATO, T ;
SHIMADA, M .
JOURNAL OF MATERIALS SCIENCE, 1990, 25 (1B) :619-623
[5]  
FAGAN JG, 1993, AM CERAM SOC BULL, V72, P69
[6]  
GOUGH D, 1993, THESIS ALFRED U ALFR
[7]  
HASEGAWA A, 1989, NIPPON SERAM KYO GAK, V97, P549, DOI 10.3724/SP.J.1087.2011.01138
[8]   BARIUMTITANAT ALS SPERRSCHICHTHALBLEITER [J].
HEYWANG, W .
SOLID-STATE ELECTRONICS, 1961, 3 (01) :51-58
[9]  
Igarashi H., 1981, Japanese Journal of Applied Physics, V20, P135
[10]  
IGARASHI H, 1988, ELECT CERAMICS, V19, P36