Dynamics of stimulated emission in silicon nanocrystals

被引：148

作者：

Dal Negro, L

Cazzanelli, M

Pavesi, L

Ossicini, S

Pacifici, D

Franzò, G

Priolo, F

Iacona, F

机构：

[1] Univ Trent, Dipartimento Fis, INFM, I-38050 Trent, Italy

[2] Univ Modena & Reggio Emilia, INFMS3, I-42100 Reggio Emilia, Italy

[3] Univ Modena & Reggio Emilia, Dipartimento Sci & Metodi Ingn, I-42100 Reggio Emilia, Italy

[4] Univ Catania, Dipartimento Fis & Astron, INFM, I-95123 Catania, Italy

[5] CNR, IMM, Sez Catania, I-95121 Catania, Italy

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 26期

关键词：

D O I：

10.1063/1.1586779

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time-resolved luminescence measurements on silicon nanocrystal waveguides obtained by thermal annealing of plasma-enhanced chemical-vapor-deposited thin layers of silicon-rich oxide have revealed fast recombination dynamics related to population inversion which leads to net optical gain. Variable stripe length measurements performed on the fast emission signal have shown an exponential growth of the amplified spontaneous emission with net gain values of about 10 cm(-1). The fast emission component is strongly dependent on the pumping length for fixed excitation intensity. In addition, both the fast component intensity and its temporal decay revealed threshold behavior as a function of the incident pump intensity. (C) 2003 American Institute of Physics.

引用

页码：4636 / 4638

页数：3

共 27 条

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