Increased field sensitivity in Co/Cu multilayers with soft adjacent layers

被引:6
作者
Jardine, DB [1 ]
Mathur, ND [1 ]
Blamire, MG [1 ]
Evetts, JE [1 ]
机构
[1] Univ Cambridge, Dept Mat Sci, Cambridge CB2 3QZ, England
基金
英国工程与自然科学研究理事会;
关键词
device; GMR; sensitivity; soft adjacent layer;
D O I
10.1109/20.706527
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The use of simple magnetic multilayers such as Co/Cu in high-sensitivity magnetic devices is limited by the high saturation field required to achieve the maximum GMR. Most GMR devices currently use spin-valve structures which exhibit significantly mailer GMP values but have a much lower saturation field, and hence a higher Sensitivity. We have demonstrated a GMR device based on Co/Cu with an integrated soft adjacent layer (SAL) structure to enhance the low field sensitivity to 60% mT(-1) in applied fields of appropriate orientation below 1 mT. This high sensitivity to smalt magnetic fields and their direction makes devices of this type well suited for a variety of applications.
引用
收藏
页码:1297 / 1299
页数:3
相关论文
共 8 条
[1]   HIGH-SENSITIVITY, GMR, 1-MICRON WIDE, END-ON, GANGED, READ HEAD SENSORS [J].
CHEN, EY ;
POHM, AV ;
DAUGHTON, JM ;
BROWN, J ;
BLACK, WC .
IEEE TRANSACTIONS ON MAGNETICS, 1994, 30 (06) :3816-3818
[2]   GMR MATERIALS FOR LOW-FIELD APPLICATIONS [J].
DAUGHTON, JM ;
CHEN, YJ .
IEEE TRANSACTIONS ON MAGNETICS, 1993, 29 (06) :2705-2710
[3]   GIANT MAGNETORESISTANCE IN SPIN-VALVE MULTILAYERS [J].
DIENY, B .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1994, 136 (03) :335-359
[4]   STUDIES OF GIANT MAGNETORESISTIVE CO-CU MULTILAYERS [J].
HIGHMORE, RJ ;
SOMEKH, RE ;
SHIH, WC ;
MCLOUGHLIN, IM ;
EVETTS, JE .
APPLIED SURFACE SCIENCE, 1993, 65-6 (1-4) :124-130
[5]   Giant magnetoresistance in Co/Cu multilayers with Co layers of alternating thicknesses: Reduction of magnetoresistive hysteresis [J].
Holloway, H ;
Kubinski, DJ .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (09) :7090-7094
[6]   HIGHLY SENSITIVE GIANT MAGNETORESISTANCE IN NIFE/(NI/FE/CU)N/NIFE THIN-FILMS [J].
KOUCHIYAMA, A ;
MIYAUCHI, T ;
WATANABE, K .
IEEE TRANSACTIONS ON MAGNETICS, 1994, 30 (06) :3837-3839
[7]   Sensitivity analysis of structure in GMR/insulator/SAL sensor [J].
Negoro, Y ;
Okabe, A ;
Kano, H ;
Kagawa, K ;
Suzuki, A ;
Yaoi, T ;
Hayashi, K .
IEEE TRANSACTIONS ON MAGNETICS, 1997, 33 (02) :2167-2170
[8]  
SHI J, 1998, IN PRESS IEEE T MAGN