The low-temperature initial oxidation stages of Cu(100) investigated by in situ ultra-high-vacuum transmission electron microscopy

被引：5

作者：

Sun, L ^{[1
]}

Yang, JC ^{[1
]}

机构：

[1] Univ Pittsburgh, Dept Mat Sci & Engn, Pittsburgh, PA 15261 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 2005年 / 20卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1557/JMR.2005.0236

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The nucleation and growth of Cu2O islands due to Cu(100) oxidation at temperatures from 200 to 350 degrees C have been observed by in situ ultra-high-vacuum transmission electron microscopy. For this temperature range, epitaxial Cu2O islands form a triangular shape with rounded edges when Cu(100) is exposed to dry oxygen at 5 x 10(-4) Torr in situ. Our initial analysis on the nucleation and growth of these three-dimensional Cu2O islands, agrees well with the heteroepitaxial model of surface diffusion of oxygen.

引用

页码：1910 / 1917

页数：8

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