Low-k dielectrics characterization for Damascene integration

被引：70

作者：

Lin, S ^{[1
]}

Jin, CM ^{[1
]}

Lui, L ^{[1
]}

Tsai, MS ^{[1
]}

Daniels, M ^{[1
]}

Gonzalez, A ^{[1
]}

Wetzel, JT ^{[1
]}

Monnig, KA ^{[1
]}

Winebarger, PA ^{[1
]}

Jang, S ^{[1
]}

Yu, D ^{[1
]}

Liang, MS ^{[1
]}

机构：

[1] SEMATECH Int, Austin, TX 78741 USA

来源：

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2001年

关键词：

D O I：

10.1109/IITC.2001.930042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Both CVD and SOD low-k organosilicate dielectrics (2.2 < k <3.0), provided by various material suppliers, were evaluated for material properties and 1LM integration performance. Correlations between blanket wafer characterization of material properties and integration issues were evaluated to determine what key material properties might be predictors of integration performance in CMP and via poisoning. Two material analysis techniques, nanoindentation for Young's modulus and thermal extraction-gas chromatography-mass spectroscopy (TE-GC-MS) were shown to provide highly valuable information. From the evaluation by nanoindentation, low-k dieIectrics with higher modulus possess the advantage of good CMP performance of interconnect structures. Blanket CMP test is also a severe CMP test to predict integration CMP results. Through nano-indentation and blanket CMP tests, CMP results can be divided into 4 categories and integration results can therefore be predicted. TE-GC-MS demonstrated a capability to identify ammonia, other potentially deleterious species, which correlated with a photoresist poisoning behavior during via-first-trench-last (VFTL) dual damascene integration. Lastly, the RC product formed from parametric test data for comb/serpentine structures, and Raphael modeling of the same structures shows the need to understand how etch/ash/cleans processes affect the final integrated K value of the low-k dielectric.

引用

页码：146 / 148

页数：3

共 6 条

[1]

CONLEY W, COMMUNIATION

[2]

GUPTA A, COMMUNIATION

[3]

JIN C, 2000, THERMAL DESORPTION A

[4]

LIN S, 2000, NANOINDENTATION EVAL

[5]

*SEMATECH, 1998, INT TECHN ROADM SEM

[6]

TSAI M, 2000, CU CVD OSG INTEGRATI

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