Piezoelectric thin film micromechanical beam resonators

Piezoelectric micromechanical beam resonators are investigated for application to electromechanical filters. The derivation of a dynamic admittance model describing tbe electromechanical behavior of the resonators is presented. Predictions from this model indicate that piezoelectric beam resonators offer significant potential for high-frequency applications. Using a simple three-mask fabrication process based on zinc oxide active films, doubly-clamped piezoelectric beam resonators with center frequencies ranging from 158 kHz to 1.18 MHz are reported. Resonators with both ZnO and SiO2 substrates have been realized, and triple-beam configurations investigated for reducing mechanical anchor losses. Measured quality factors range from Q = 3700 at 158 kHz to Q = 930 at 1.18 MHz. (C) 2001 Elsevier Science B.V. All rights reserved.