Comment on "Atomic transport and chemical stability during annealing of ultrathin Al2O3 films on Si"

被引:14
作者
Copel, M [1 ]
机构
[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
关键词
D O I
10.1103/PhysRevLett.86.4713
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:4713 / 4713
页数:1
相关论文
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  • [1] Atomic transport and chemical stability during annealing of ultrathin Al2O3 films on Si
    Krug, C
    da Rosa, EBO
    de Almeida, RMC
    Morais, J
    Baumvol, IJR
    Salgado, TDM
    Stedile, FC
    [J]. PHYSICAL REVIEW LETTERS, 2000, 85 (19) : 4120 - 4123