Common origin of ferromagnetism and band edge Zeeman splitting in GaMnAs at low Mn concentrations

被引：25

作者：

Chakarvorty, R.

Shen, S.

Yee, K. J.

Wojtowicz, T.

Jakiela, R.

Barcz, A.

Liu, X.

Furdyna, J. K.

Dobrowolska, M. ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

[2] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 17期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2804561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report magnetic circular dichroism measurements on thin GaMnAs films with low Mn concentration, which reveal that exchange-induced spin splitting of the band edges occurs only in samples that show ferromagnetic order, and is not observed in paramagnetic samples. These results lead to the conclusion that Mn ions in the A(0) configuration (d(5) + hole) provide the only mechanism for exchange interaction between Mn spins and band carriers. We also show that there is a linear relation between the observed exchange-induced splitting of the band edges and the Curie temperature, pointing to a common origin of the band edge splitting and ferromagnetism in GaMnAs. (C) 2007 American Institute of Physics.

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页数：3

相关论文

共 18 条

[1]

ANDO A, 1992, PHYS REV B, V46, P12289

[2] Magneto-optic effect of the ferromagnetic diluted magnetic semiconductor Ga1-xMnxAs [J].

Ando, K ;

Hayashi, T ;

Tanaka, M ;

Twardowski, A .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :6548-6550

[3] Impurity band conduction in a high temperature ferromagnetic semiconductor [J].

Burch, K. S. ;

Shrekenhamer, D. B. ;

Singley, E. J. ;

Stephens, J. ;

Sheu, B. L. ;

Kawakami, R. K. ;

Schiffer, P. ;

Samarth, N. ;

Awschalom, D. D. ;

Basov, D. N. .

PHYSICAL REVIEW LETTERS, 2006, 97 (08)

[4] Ellipsometric study of the electronic structure of Ga1-xMnxAs and low-temperature GaAs -: art. no. 205208 [J].

Burch, KS ;

Stephens, J ;

Kawakami, RK ;

Awschalom, DD ;

Basov, DN .

PHYSICAL REVIEW B, 2004, 70 (20) :205208-1

[5] Determination of Mn acceptor compensation in MBE-grown GaMnAs via magnetic circular dichroism (MCD) [J].

Chakarvorty, Raja ;

Zhou, Ying-Yuan ;

Cho, Yong-Jin ;

Liu, Xinyu ;

Jakiela, Rafal ;

Barcz, Adam ;

Furdyna, Jacek K. ;

Dobrowolska, Malgorzata .

IEEE TRANSACTIONS ON MAGNETICS, 2007, 43 (06) :3031-3033

[6] DILUTED MAGNETIC SEMICONDUCTORS [J].

FURDYNA, JK .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :R29-R64

[7] Tuning of the average p-d exchange in (Ga,Mn)As by modification of the Mn electronic structure -: art. no. 233201 [J].

Hartmann, T ;

Ye, S ;

Klar, PJ ;

Heimbrodt, W ;

Lampalzer, M ;

Stolz, W ;

Kurz, T ;

Loidl, A ;

von Nidda, HAK ;

Wolverson, D ;

Davies, JJ ;

Overhof, H .

PHYSICAL REVIEW B, 2004, 70 (23) :1-4

[8] Monitoring the sign reversal of the valence band exchange integral in (Ga,Mn)As [J].

Heimbrodt, W ;

Hartmann, T ;

Klar, PJ ;

Lampalzer, M ;

Stolz, W ;

Volz, K ;

Schaper, A ;

Treutmann, W ;

von Nidda, HAK ;

Loidl, A ;

Ruf, T ;

Sapega, VF .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2001, 10 (1-3) :175-180

[9] Carrier-density dependence of magnetic and magneto-optical properties of (Ga,Mn)As [J].

Komori, T ;

Ishikawa, T ;

Kuroda, T ;

Yoshino, J ;

Minami, F ;

Koshihara, S .

PHYSICAL REVIEW B, 2003, 67 (11) :6

[10]

Lang R, 2005, PHYS REV B, V72, DOI [10.1103/PhysRevB.72.024430, 10.1103/PhysRevB.024430]