Influence of oxygen vacancies on the electronic structure of HfO2 films

被引:39
作者
Cho, Deok-Yong [1 ,2 ]
Lee, Jae-Min [1 ,2 ]
Oh, S. -J. [1 ,2 ]
Jang, Hoyoung [3 ,4 ]
Kim, J. -Y. [5 ]
Park, J. -H. [3 ,4 ,5 ]
Tanaka, A. [6 ]
机构
[1] Seoul Natl Univ, CSCMR, Seoul 151742, South Korea
[2] Seoul Natl Univ, Dept Phys & Astron, Seoul 151742, South Korea
[3] Pohang Univ Sci & Technol, eSSC, Pohang 790784, South Korea
[4] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
[5] Pohang Univ Sci & Technol, Pohang Accelerator Lab, Pohang 790784, South Korea
[6] Hiroshima Univ, ADSM, Dept Quantum Matter, Higashihiroshima 7398526, Japan
关键词
D O I
10.1103/PhysRevB.76.165411
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigated the unoccupied part of the electronic structure of the oxygen-deficient hafnium oxide (HfO similar to 1.8) using soft x-ray absorption spectroscopy at O K and Hf N-3 edges. Band-tail states beneath the unoccupied Hf 5d band are observed in the O K-edge spectra. Combined with ultraviolet photoemission spectrum, this indicates the non-negligible occupation of the Hf 5d state. However, Hf N-3-edge magnetic circular dichroism spectrum reveals the absence of a long-range ferromagnetic spin order in the oxide. Thus, the small amount of d electron gained by the vacancy formation does not show intersite correlation, contrary to a recent paper [M. Venkatesan , Nature 430, 630 (2004)].
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页数:5
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