Development of efficient and stable back contacts on CdTe/CdS solar cells

被引:121
作者
Bätzner, DL
Romeo, A
Zogg, H
Wendt, R
Tiwari, AN
机构
[1] Swiss Fed Inst Technol, Inst Quantum Elect, Thin Film Phys Grp, CH-8005 Zurich, Switzerland
[2] ANTEC GmbH, D-65779 Kelkheim, Germany
关键词
back contact; stability; CdTe; thin films; SIMS; solar cells;
D O I
10.1016/S0040-6090(01)00792-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
To make CdTe/CdS solar cells highly efficient, a Cu containing back contact (BC) is generally used. These cells degrade due to Cu diffusion to the front contact which causes shunting; this is shown with secondary ion mass spectroscopy (SIMS) depth profiling. To get a stable but still highly efficient cell, different BC materials and etching treatments were investigated. Chemical etching creates a back surface field (BSF) due to a p(+)-doped Te-rich CdTe surface. To overcome the naturally existing Schottky barrier between p-CdTe and any metal, a thin buffer layer was evaporated prior to the metallization. Amongst the many investigated BC materials, the most suitable are Sb or Sb(2)Te(3) as a buffer and Mo for metallization. These eels showed high stability under accelerated tests corresponding to 70 years. (C) 2001 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码:151 / 154
页数:4
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