Dielectric properties of Pr2O3 high-k films grown by metalorganic chemical vapor deposition on silicon

被引：51

作者：

Lo Nigro, R

Raineri, V

Bongiorno, C

Toro, R

Malandrino, G

Fragalá, IL

机构：

[1] CNR, IMM, Sez Catania, I-95121 Catania, Italy

[2] Univ Catania, Dipartimento Sci Chim, I-95125 Catania, Italy

[3] INSTM, UdR Catania, I-95125 Catania, Italy

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 01期

关键词：

D O I：

10.1063/1.1580633

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Praseodymium oxide (Pr2O3) thin films have been deposited on Si(100) substrates by metalorganic chemical vapor deposition using praseodymium tris-2,2,6,6-tetramethyl-3,5-heptandionate as source material. Film structural, morphological, and compositional characterizations have been carried out. Dielectric properties have been studied as well by capacitance-voltage and current-voltage measurements on metal-oxide-semiconductor capacitors of several areas. The Pr2O3 films have shown a dielectric constant epsilon=23-25 and a leakage current density of 8.8x10(-8) A/cm(2) at + 1 V. (C) 2003 American Institute of Physics.

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页码：129 / 131

页数：3

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