Adhesion characteristics of alicyclic polymers for use in ArF excimer laser lithography
被引:10
作者:
Nakano, K
论文数: 0引用数: 0
h-index: 0
机构:
NEC Corp Ltd, Funct Devices Res Labs, Miyamae Ku, Kawasaki, Kanagawa 2168555, JapanNEC Corp Ltd, Funct Devices Res Labs, Miyamae Ku, Kawasaki, Kanagawa 2168555, Japan
Nakano, K
[1
]
Iwasa, S
论文数: 0引用数: 0
h-index: 0
机构:
NEC Corp Ltd, Funct Devices Res Labs, Miyamae Ku, Kawasaki, Kanagawa 2168555, JapanNEC Corp Ltd, Funct Devices Res Labs, Miyamae Ku, Kawasaki, Kanagawa 2168555, Japan
Iwasa, S
[1
]
Maeda, K
论文数: 0引用数: 0
h-index: 0
机构:
NEC Corp Ltd, Funct Devices Res Labs, Miyamae Ku, Kawasaki, Kanagawa 2168555, JapanNEC Corp Ltd, Funct Devices Res Labs, Miyamae Ku, Kawasaki, Kanagawa 2168555, Japan
Maeda, K
[1
]
Hasegawa, E
论文数: 0引用数: 0
h-index: 0
机构:
NEC Corp Ltd, Funct Devices Res Labs, Miyamae Ku, Kawasaki, Kanagawa 2168555, JapanNEC Corp Ltd, Funct Devices Res Labs, Miyamae Ku, Kawasaki, Kanagawa 2168555, Japan
Hasegawa, E
[1
]
机构:
[1] NEC Corp Ltd, Funct Devices Res Labs, Miyamae Ku, Kawasaki, Kanagawa 2168555, Japan
来源:
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2
|
1998年
/
3333卷
关键词:
ArF excimer laser lithography;
alicyclic polymer;
work of adhesion;
interfacial free energy;
D O I:
10.1117/12.312438
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
We evaluate the adhesion characteristics and relationship between work of adhesion and structure of polar-alicyclic polymers we developed for use in ArF excimer laser lithography. We found that the adhesion of the polymers and resists in both the alkaline-developer and water circumstances depends on the work of adhesion in air. Stronger adhesion can be obtained with higher polarity of polymer films caused by the higher surface free energy due to hydrogen bonds. The polarity of polymers and functional groups is evaluated with their relative dielectric constants. With the standard developer (2.38% tetramethylammonium hydroxide aqueous solution), the chemically amplified resist based on poly(carboxy-tetracyclo[4.4.0.1(2,5).1(7,10)]dodecylacrylate) forms a 0.18-mu m L&S pattern by the ArF excimer laser dose.