Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors

被引:45
作者
Hamadani, B. H.
Richter, C. A.
Gundlach, D. J.
Kline, R. J.
McCulloch, I.
Heeney, M.
机构
[1] Natl Inst Stand & Technol, Div Semicond Elect, Gaithersburg, MD 20899 USA
[2] Natl Inst Stand & Technol, Div Polymers, Gaithersburg, MD 20899 USA
[3] Merck Chem, Southampton S016 7QD, Hants, England
关键词
D O I
10.1063/1.2769782
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on a strong field-dependent mobility in organic field-effect transistors fabricated by using poly(2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT-C14) as the active polymer layer. Charge transport and mobilities in devices annealed in the mesophase show a more pronounced dependence on channel length as compared with as-cast devices. Analysis reveals that the contact effects in both sets of devices are negligible from room temperature down to approximate to 100 K. We show that this field dependence is consistent with a Poole-Frenkel model of mobility. Finally, the nonlinear transport data for short channel devices are modeled consistently in the Poole-Frenkel framework over a broad temperature range. (C) 2007 American Institute of Physics.
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页数:7
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