Photon antibunching observed from an InAlAs single quantum dot

被引:22
作者
Kimura, S [1 ]
Kumano, H
Endo, M
Suemune, I
Yokoi, T
Sasakura, H
Adachi, S
Muto, S
Song, HZ
Hirose, S
Usuki, T
机构
[1] Hokkaido Univ, RIES, Sapporo, Hokkaido 0010021, Japan
[2] Hokkaido Univ, Dept Appl Phys, Sapporo, Hokkaido 0608628, Japan
[3] CREST, JST, Kawaguchi, Saitama 3320012, Japan
[4] Fujitsu Ltd, Atsugi, Kanagawa 2430197, Japan
[5] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 24-27期
关键词
photon antibunching; quantum dot; photon correlation measurement; single photon emission; InAlAs;
D O I
10.1143/JJAP.44.L793
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single-photon emitters and detectors are key devices to realize secure communications with single-photon-based quantum cryptography and single-photon-based quantum computing. InAlAs quantum dots (QDs) cover the wavelength range with high quantum efficiencies of Si-based single-photon detectors. Clear photon antibunching was observed from an InAlAs single QD under weak excitations. To realize single-photon emitters on demand, complete population of the QD energy states before the photon emission events is necessary, but the measured antibunching properties were dependent substantially on the photo-excitation powers. The physical origin of this problem is discussed. The criterion to distinguish the real deviation from the photon antibunching condition and the artifact of the measurements is clarified. The capability of single-photon emissions on demand will be demonstrated with photon antibunching under pulsed operations.
引用
收藏
页码:L793 / L796
页数:4
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